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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2730TP SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The PA2730TP which has a heat spreader is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. 1.49 0.21 1.44 TYP. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain FEATURES * Low on-state resistance RDS(on)1 = 7.0 m MAX. (VGS = -10 V, ID = -7.5 A) RDS(on)2 = 10.5 m MAX. (VGS = -4.5 V, ID = -7.5 A) RDS(on)3 = 12.0 m MAX. (VGS = -4.0 V, ID = -7.5 A) * Low Ciss: Ciss = 4670 pF TYP. * Small and surface mount package (Power HSOP8) 1 5.2 +0.17 -0.2 4 0.8 0.2 S +0.10 -0.05 6.0 0.3 4.4 0.15 0.05 0.05 0.15 1.27 TYP. 0.40 1 +0.10 -0.05 0.10 S 0.12 M 1.1 0.2 4 2.9 MAX. ORDERING INFORMATION PART NUMBER PACKAGE Power HSOP8 8 2.0 0.2 9 4.1 MAX. PA2730TP 5 ABSOLUTE MAXIMUM RATINGS (TA = 25C, Unless otherwise noted, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Note1 Drain Current (DC) Note2 Drain Current (pulse) Total Power Dissipation (TC = 25C) Note1 Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Note3 Single Avalanche Current Note3 Single Avalanche Energy VDSS VGSS ID(DC)1 ID(DC)2 ID(pulse) PT1 PT2 Tch Tstg IAS EAS -30 m20 m42 m20 m120 40 3 150 -55 to + 150 -15 22.5 V V A A A W W C C A mJ EQUIVALENT CIRCUIT Drain Gate Body Diode Source Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec 2. PW 10 s, Duty Cycle 1% 3. Starting Tch = 25C, VDD = -15 V, RG = 25 , L = 100 H, VGS = -20 0 V Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with NEC Electronics sales representative for availability and additional information. Document No. G15983EJ1V0DS00 (1st edition) Date Published November 2002 NS CP(K) Printed in Japan 2002 PA2730TP ELECTRICAL CHARACTERISTICS (TA = 25C, Unless otherwise noted, All terminals are connected.) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = -24 V VGS = -10 V ID = 15 A IF = 15 A, VGS = 0 V IF = 15 A, VGS = 0 V di/dt = 100 A/ s TEST CONDITIONS VDS = -30 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -7.5 A VGS = -10 V, ID = -7.5 A VGS = -4.5 V, ID = -7.5 A VGS = -4.0 V, ID = -7.5 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -15 V, ID = -7.5 A VGS = -10 V RG = 10 MIN. TYP. MAX. UNIT -1 m100 -1.0 14 30 5.7 7.7 8.8 4670 1220 760 20 28 190 110 97 10 32 0.81 65 62 7.0 10.5 12.0 A nA V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC -2.5 TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = -20 0 V 50 TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS(-) RL VDD VDS(-) 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS(-) 0 VDS VDS Wave Form 0 td(on) ton = 1 s Duty Cycle 1% tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = -2 mA PG. 50 RL VDD 2 Data Sheet G15983EJ1V0DS PA2730TP TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 4 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm) TA = 25C , PW = 10 s , Single pulse 100 80 60 40 20 0 0 25 50 75 100 125 150 175 3.5 3 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA - 1000 RDS(on)Limited (at VGS = -10 V) ID(pulse) ID - Drain Current - A - 100 ID(DC) PW = 100 s - 10 -1 - 0.1 1 ms 10 ms Power Dissipation Limited Mounted on a glass epoxy board (1 inch x1 inch x 0.8 m m) TA = 25C , Single pulse 100 ms 10 s - 0.01 - 0.1 -1 - 10 - 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W Single pulse Rth(ch-A) = 89.3C/W 100 10 Rth(ch-C) = 3.13C/W 1 0.1 Remark rth(ch-A) : Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm) , TA = 25C rth(ch-C) : TC = 25C 0.01 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G15983EJ1V0DS 3 PA2730TP DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 120 - 100 VGS = -10 V -4.5 V -4.0 V - 80 - 60 - 40 - 20 Pulsed 0 0 -1 -2 -3 FORWARD TRANSFER CHARACTERISTICS - 1000 ID - Drain Current - A ID - Drain Current - A - 100 T ch = 150C 75C 25C -55C - 10 -1 - 0.1 Pulsed VDS = -10 V - 0.01 0 -1 -2 -3 -4 -5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 Tch = -55C 25C 75C 150C VGS(off) - Gate Cut-off Voltage - V - 2.5 -2 - 1.5 -1 - 0.5 0 -50 0 50 - VDS = -10 V ID = -1 m A 10 1 Pulsed VDS = -10 V 0.1 - 0.1 -1 - 10 - 100 100 150 Tch - Channel Temperature - C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - m 20 Pulsed RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 ID = -7.5 A Pulsed 15 VGS = -4.0 V -4.5 V -10 V 15 10 10 5 5 0 - 0.1 0 0 -5 - 10 - 15 - 20 -1 - 10 - 100 ID - Drain Current - A VGS - Gate to Source Voltage - V 4 Data Sheet G15983EJ1V0DS PA2730TP RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 15 ID = -7.5 A Pulsed VGS = -4.0 V -4.5 V 10 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 C is s Ciss, Coss, Crss - Capacitance - pF C oss 1000 C rs s -10 V 5 100 VGS = 0 V f = 1 MHz 10 - 0 .0 1 - 0 .1 -1 - 10 - 100 0 -50 0 50 100 150 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS -3 0 -1 5 VDS VDS - Drain to Source Voltage - V td(off) 100 tf tr -2 0 V D D = -24 V -15 V -6 V -1 0 10 td(on) VDD = -15 V VGS = -10 V R G = 10 -1 0 V GS -5 1 - 0.1 0 -1 - 10 - 100 0 20 40 60 80 10 0 0 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed 100 VGS = -10 V 1000 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT di/dt = 100 A/s VGS = 0 V trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 0V 10 100 1 10 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 0.1 1 10 100 VF(S-D) - Source to Drain Voltage - V IF - Diode Forword Current - A Data Sheet G15983EJ1V0DS 5 VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns PA2730TP SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD - 100 120 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = -15 V RG = 25 VGS = -20 0 V IAS -15 A IAS - Single Avalanche Current - A Energy Derating Factor - % IAS = -15 A - 10 EAS = 22.5 m J 100 80 60 40 20 0 -1 VDD = -15 V R G = 25 VGS = -20 0 V Starting T ch = 25C 0.1 1 10 - 0.1 0.01 25 50 75 100 125 150 L - Inductive Load - mH Starting Tch - Starting Channel Temperature - C 6 Data Sheet G15983EJ1V0DS PA2730TP [MEMO] Data Sheet G15983EJ1V0DS 7 PA2730TP * The information in this document is current as of November, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such NEC Electronics products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11 |
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